| PART |
Description |
Maker |
| LN671 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| OLD2210 |
GaAlAs Infrared Light Emitting Diode(砷化稼红外线发光二极
|
OKI SEMICONDUCTOR CO., LTD.
|
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| LNA2702L 0878 LN59 LN59L LN59-LNA2702L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
From old datasheet system
GaAs Bi-directional Infrared Light Emitting Diodes
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| TLN208 |
LED LAMP GaAlAs INFRARED EMITTER
INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor
Toshiba Corporation
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| LN78 |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
|
| KLB-16AI-94 |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| VTE1295 |
GaAlAs Infrared Emitting Diodes
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
HITACHI[Hitachi Semiconductor]
|
